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Julien Barjon, Université de Versailles Saint-Quentin-en-Yvelines, France
Bound excitons to probe the shallow dopants of diamond
Christoph Becher, Universität des Saarlandes, Germany
Coherent control of silicon-vacancy centers in diamond
Chia-Liang Cheng, National Dong Hwa University, Taiwan
On low temperature catalytic activity of nanodiamond particles
Hiromitsu Kato, AIST, Japan
Lightly phosphorus doping regime in (111) CVD diamond and its electrical characterization
Tsubasa Matsumoto, Kanazawa University, Japan
Inversion channel diamond MOSFET
Hiromichi Ohashi, AIST, Japan
Horizon beyond ideal power devices: Si, SiC, GaN and diamond devices
Jörg Wrachtrup, Universität Stuttgart & Max-Planck-Institut für Festkörperforschung, Germany
Applying diamond quantum sensors


Panel Diamond Power Devices

Satoshi Yamasaki, Chair & Co-moderator, AIST, Japan
Christoph E. Nebel, Co-moderator, Fraunhofer Institut Angewandte Festkörperphysik, Germany
Etienne Gheeraert, CNRS/Université Grenoble Alpes-Institut Néel, France
Toshiharu Makino, AIST, Japan
Robert Nemanich, Arizona State University, U.S.A.
Hiromichi Ohashi, AIST, Japan

For the first time, SBDD will feature a panel discussion on the science an technology of diamond power devices. Recently, due to the community's large efforts, many different diamond electronic devices were realised together with several breakthroughs in the field of diamond substrates. Despite these successes, still many issues need to be overcome before real commercialisation can be considered. The panel will address the following points:

1) What are the most pressing scientific issues that must be solved?
2) What kind of performances are expected and needed to appeal to commercial players in Europe, USA, and Japan?
3) What markets will be addressed?

We hope for a lively discussion on new trends and recent worldwide activities. Ample time for Q&A will be foreseen.