Project R-15744

Role of dislocations in phosphorus-doped diamond based high-power electronics (Research)

This research proposal seeks to explain the relationship between density of dislocations, phosphorus doping in diamond layers, and their impacts on the electrical characteristics of diamond-based power electronics. Despite significant advancements in the growth doped diamond, challenges persist, notably in achieving high-quality single crystal P-doped diamond layers. In this project, an innovation strategy is designed to inhibit the propagation of dislocation density in P doped diamond films from the heteroepitaxial diamond substrates. We will systematically explore how dislocations affect phosphorus incorporation, its activation and compensation, and electron transport in P-doped diamond layers. Moreover, the impact of dislocations on device performance and reliability, particularly Schottky diodes, will be assessed. Through advanced synthesis processes and characterization techniques, we aim to build a fundamental and innovative knowledge on the strategies for reducing the dislocation density in P doped diamond layers deposited on the heteroepitaxial diamond substrates, and mitigating their effects on diamond-based electronics. The findings are expected to significantly advance the fabrication of reliable diamond based devices, marking a pivotal leap in semiconductor technology and opening new avenues for diamond.

01 January 2025 - 31 December 2026